Use this preamble for question 21 to 23
For an abrupt p+n junction diode, the doping concentration of the n-region is 10¹⁶cm³, The width of the n-depletion-region is 2microm. Assuming this width is much smaller than the width of the hole-depletion region and the diode has a cross-sectional area of 100microm x 100microm 21. Calculate D,p, the hole diffusion constant in cm²s^-1.
22 Calculate the reverse saturation current, Io in A at 300K.
23. If t the diode is put in circuit and a forward bias voltage of 5V​