Ok so in photon electronics we have the classic silicon PN junction but we also have Titanium oxide semi-conducting layers that require no PN junction. A common utilized compound element used would be BaTiO3 and it has a dielectric strength of 2000 V / Micro meter.
I would imagine to create a 4000 V potential difference across 2 micro meters we would not only need to multiply the charge by 4 to create an electric potential difference of 2000V but we would actually need to continue to increase the charge to raise it to 4000V needed for the 2 micro meter distance.
How can BaTiO3 have a dielectric breakdown of 2000 V / micro meter if the strength is incrementally multiplied when raising voltage to 4000 V over 2 micro meters?
Is there something I don't understand here? I know static electric charge well, I understand coloumbs law and how it applies. I know charge needed to attain a voltage remains the same but increases based on distance from source as long as the dielectric is constant.
It just doesn't compute with me, much thanks to whoever solves this.​